OFC

2017 Optical Networking and Communication Conference & Exhibition

booth 1331. Location this year is LA Convention Center. Show dates March 21-23, 2017 Web site: ofcconference.org

 

Our business philosophy is simple and straightforward: “Work closely with our customers, produce high-quality technology, and keep costs down - every time.”

Malcolm D. Hill

President


Certified since March 2010

ISO Cert

 

 

Substrate


Layout Templates

(Right Click and Choose "Save as")

Standard Herman
(3.75" x 4.5") layout

(.dwg file) or (.pdf file)
Standard
3.0"x3.0" layout

(.dwg file) or (.pdf file)

 

All circuit designs begin with the proper choice of substrate.  Factors such as dielectric constant, loss tangent, thermal dissipation and cost all factor into the proper choice of material.  DITF offers our services on all substrate materials — Al2O3 (Alumina — 99.6% as-fired or polished), BeO, AlN, Fused Silica and Barium Titanate all provide various properties of interest to the designer. Mouse over each substrate material for information on applications for each material.

Common Substrates and Properties

Material Surface Finish
& Roughness
inch/
inch
g/cm3
KX10-3 10-6/°C (@25°C)
w/m°K
kV/
mm
Ωcm 1MHz/
10GHz
1MHz/
10GHz
A B C D E F G H I
Alumina
>95.5%

Low to medium power DC/RF or Microwave
circuitsusing Si or GaAs Ics











Fired
± 3µ"
± 0.003
3.88
90
7-8.3
~35
~23
<1014
9.9/
9.6
.001/
.002
Pol.
< 1µ"
0.0005
Aluminum Nitride

High-power DC/RF/Microwave
circuits using Silicon and GaAs Ics.











Lapped
12"-20µ"
0.001
3.30
59
4.6
170
~15
<1013
8.5-9.2
/na
.004/
na
Pol.
< 2µ"
0.0005
Beryllium
Oxide




High-power DC/RF/Microwave circuits
using Silicon or GaAs Ics. High-power termination.







Fired
10"-20µ"
± 0.005
2.85
35
9
265
-
< 1015
6.6/
6.7
.003/
.0009
Pol.
< 4µ"
± 0.0005
Fused
Silica





Microwave/Millimeter-wave circuits requiring
extremely low loss or low CTE.







Pol.
60/40
0.0005
2.20
25
0.55
1.38
30
<1010
3.82/
na
-
Lapped
7 -12µ"
0.0005
Sapphire



Millimeter-wave/optical circuits with special
electrical or mechanical requirements.







Pol.
<1µ"
0.0005
3.97
60
5.3
~40
-
<1017
9.3*-11.4
/na
.00086-.
0003*
Lapped
10"-20µ"
0.0005
Ferrite





RF/Mircrowave circulators/isolators







Pol.
10µ
0.001
-
-
-
-
-
< 1017
11.3/
15.4
.0002-
.0015

*Varies with crystal orientation. A Plane / C Plane

A: Camber B: Density C: Flexural Strength D: Thermal Expansion E: Thermal Conductivity
F: Dielectric Strength G: Volume Resistivity H: Dielectric Constant I: Loss Tangent

 

Materials Properties Chart

Properties Units Polished High Density 996 Alum. Oxide As-fired High Density 996 Alum. Oxide Hi-rel Grade
Beryllium
Oxide
Aluminum
Nitride
Fused Silica Quartz Sapphire
(Crystalline)
Polished
Titanates
Ferrites
and Garnets
Chemical Composition
 
AI2O3
AI2O3
BeO
AIN
SiO2
AI2O3
Purity
%
99.6
99.6
99.5
98
100
100
Color
White
White
White
Tan
Transparent
Transparent
Cream
Gray
Nominal Density
g/cm3
3.87
3.87
2.85
3.28
2.2
3.97
Surface Finish (Polished)
μ-inches
<1.0
n/a
2.0-4.0
<2.0
60/40 Optical
<1.0μ-inch CLA
<3.0
<16.0
Surface Finish (As fired)
μ-inches
n/a
2-3
n/a
n/a
n/a
n/a
n/a
n/a
Camber
inch/inch
.0003/.0005
.002
.0003/.0005
.0003/.0005
.0003/.0005
.0003/.0005

Thickness

inches
0.004-.040*
0.005-0.025*
0.005-0.100*
0.004-0.100*
0.004-0.080*
0.004-0.050*
0.005-0.025*
0.010-0.025*
Thickness Tolerance
inches
±0.0005
±0.001*
±0.0005
±0.0005
±0.0005
±0.0005
±0.0005
±0.0005
Process Sizes
inches
(L/W)
1.0/4.5
1.0/6.0
1.0/2.25
1.0/4.5
1.0/2.25
1.0/2.25
1.0/2.25
1.0/2.25
Coefficient of Thermal Expansion (CTE)
10-6
7.0-8.3
(25-1000°C)
7.0-8.3
(25-1000°C)
9.0
(25-1000°C)
4.6
(25-300°C)
0.55
(20-320°C)
A plane @
25°C-5.3
Thermal Conductivity
Watts/m°K
26.9
26.9
270
170
n/a
n/a
Dielectric Constant
@1 MHz
9.9±0.1
9.9±0.1
6.5
8.6
3.826
11.5/9.3†
36–180
14.5–17.6
Dielectric Constant
@4 MHz
9.9
9.9
Dielectric Constant
@10 MHz
9.7
9.7
Dissipation Factor (Loss Tangent)
@1 MHz
0.0001
0.0001
0.0004
0.001
0.000015
.00086/.0003†
Dissipation Factor (Loss Tangent)
@10 MHz
0.0002
0.0002
Q
@1 GHz
5000
5000
5000
Hardness
Rockwell
87
87
45
n/a
7 Mohs
1800/2200A
Knoop
Flexural Strength
K(10-3) lbs/sq.in.
90
90
35
(3 pt. bend)
59
(4 pt. bend)
25
60
Compressive Strength
M(10-3) lbs/sq.in.
54
54
n/a
n/a
161
350
Grain Size
um (microns)
<1.0
<1.0
9-16
5-7
Amorphous
Single Crystal

• Additional thicknesses and tolerances available upon request
† Value varies with orientation ("A" plane / "C" plane)

West Coast Sales

Glen Steward

(510) 468-7341

gsteward@ditf.com

East Coast Sales

Tom Lavallee

(603) 845-3450

tpl@ditf.com

DITF - Interconnect Technology

(775) 782-1041

sales@ditf.com

2245 Meridian Blvd.
Minden , NV 89423